BSZ130N03LSGATMA1

BSZ130N03LSGATMA1

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Manufacturer Part BSZ130N03LSGATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 30V 10A/35A 8TSDSON
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet BSZ130N03LSGATMA1 PDF

Availability

InStock 19,820
UnitPrice $ 0.66000

BSZ130N03LSGATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

BSZ130N03LSGATMA1 Specifications

Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:970 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN

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Shipping Rate

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